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| SHINDENGEN General Purpose Rectifiers * O U T L I N E D I M E N S I O N S SIL Bridges D10XB60 600V 10A FEATURES Case : 3S Unit : mm *oeSingle In-Line Package Thin *oe High current capacity with Small Package *oe High IFSM *oe Superior Thermal Conductivity APPLICATION *oe Switching power supply *oe Home Appliances, Office Equipment *oe Factory Automation, Inverter RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 600 V Average Rectified Forward Current 50Hz sine wave, R-load With heatsink IO Tc=100*Z 10 A 50Hz sine wave, R-load* Without heatsink Ta=25*Z @ 2.7 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25*Z A 120 I2 t 1ms*...t*10ms*@Tj=25*Z A2 s Current Squared Time 60 Dielectric Strength Vdis Terminals to case, AC 1 minute 2.5 kV Mounting Torque TOR * ecommended torque*0.5Nm*j R i F 0.8 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Forward Voltage VF IF =5A, Pulse measurement, Rating of per diodeMax.1.1 V R RM Reverse Current IR V =V , Pulse measurement, Rating of per diode Max.10 EA AEjc junction to case *@*@With heatsink Max.2.3 Thermal Resistance AEjl junction to lead *@* Without heatsink @ Max.6 *Z/W AEja junction to ambient Without heatsink Max.26 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D10XBx Forward Voltage 10 Forward Current IF [A] 1 Tc=150C [TYP] Tc=25C [TYP] Pulse measurement per diode 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage VF [V] D10XBx 40 35 Forward Power Dissipation SIN Forward Power Dissipation PF [W] 30 25 20 15 10 5 0 0 5 10 15 Average Rectified Forward Current IO [A] Tj = 150C Sine wave D10XBx 14 Derating Curve Heatsink Tc Tc Average Rectified Forward Current IO [A] 12 SIN 10 8 6 4 2 0 80 90 100 110 120 130 140 150 160 Case Temperature Tc [C] Sine wave R-load with heatsink D10XBx 3.2 Derating Curve Average Rectified Forward Current IO [A] 2.8 2.4 2 1.6 1.2 0.8 0.4 0 SIN PCB Glass-epoxy substrate Soldering land 5mm 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] Sine wave R-load Free in air D10XBx 200 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 150 non-repetitive, sine wave, Tj=25C before surge current is applied 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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